Vishay IRFBG20PBF
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)1.4 A
Current Rating1.4 A
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance11 Ω
Drain to Source Voltage (Vdss)1 kV
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance500 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation54 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation54 W
Rds On Max11 Ω
Resistance11 Ω
Rise Time17 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time58 ns
Turn-On Delay Time9.4 ns
Voltage Rating (DC)1 kV
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm
Inventory History
3 month trend: +2.60%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay IRFBG20PBF.
관련 부품
VishayIRFBF20PBF
Single N-Channel 800 V 6.5 Ohms Flange Mount Power Mosfet - TO-220-3
VishayIRFBE20PBF
Single N-Channel 800 V 6.5 Ohms Flange Mount Power Mosfet - TO-220-3
VishayIRFBG30PBF
Single N-Channel 1000 V 5 Ohms Flange Mount Power Mosfet - TO-220-3
설명
유통업체에서 제공한 Vishay IRFBG20PBF에 대한 설명입니다.
Single N-Channel 1000 V 11 Ohms Flange Mount Power Mosfet - TO-220AB
MOSFET N-CH 1000V 1.4A TO-220AB / Trans MOSFET N-CH 1KV 1.4A 3-Pin(3+Tab) TO-220AB
MOSFET N-CH 1000V 1.4A TO-220AB | Siliconix / Vishay IRFBG20PBF
N Channel Mosfet, 1Kv, 1.4A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:1.4A; On Resistance Rds(On):11Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
MOSFET, N, 1000V, 1.4A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):11.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:1.4A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.3°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:5.2A; Termination Type:Through Hole; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: +2.60%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)1.4 A
Current Rating1.4 A
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance11 Ω
Drain to Source Voltage (Vdss)1 kV
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance500 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation54 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation54 W
Rds On Max11 Ω
Resistance11 Ω
Rise Time17 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time58 ns
Turn-On Delay Time9.4 ns
Voltage Rating (DC)1 kV
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm