Infineon IRFB4127PBF
Production
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)76 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance17 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.38 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max20 mΩ
Resistance20 MΩ
Rise Time18 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time56 ns
Turn-On Delay Time17 ns
Dimensions
Height9.02 mm
Length10.668 mm
Width4.826 mm
Inventory History
3 month trend: +16.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRFB4127PBF.
관련 부품
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Transistor, N-channel, PowerTrench MOSFET, 150V, 79A, 16mOhm, TO-220 | ON Semiconductor FDP2532
InfineonIRFB4321PBF
Transistor: N-MOSFET; unipolar; 150V; 83A; 15mohm; 330W; -55+175 deg.C; THT; TO220AB
InfineonIRFB4228PBF
150V Single N-Channel PDP Switch HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
설명
유통업체에서 제공한 Infineon IRFB4127PBF에 대한 설명입니다.
Single N-Channel 200 V 20 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3
In a Pack of 2, N-Channel MOSFET, 76 A, 200 V, 3-Pin TO-220AB Infineon IRFB4127PBF
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 200V 76A 3-Pin (3+Tab) TO-220AB Tube
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 375 W
MOSFET, N Ch., 200V, 76A, 21 MOHM, 110 NC, D2-PAK, Pb-Free
N Channel Mosfet, 200V, 76A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:76A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon IRFB4127PBF.
MOSFET, N-CH, 200V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:200V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:76A; Package / Case:TO-220AB; Power Dissipation Pd:375W; Pulse Current Idm:300A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +16.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)76 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance17 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.38 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max20 mΩ
Resistance20 MΩ
Rise Time18 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time56 ns
Turn-On Delay Time17 ns
Dimensions
Height9.02 mm
Length10.668 mm
Width4.826 mm