onsemi FDD86250
Production
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance18.4 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.11 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation132 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max22 mΩ
Resistance45 MΩ
Rise Time3.7 ns
Schedule B8541290080
Threshold Voltage2.9 V
Turn-Off Delay Time20 ns
Turn-On Delay Time11.2 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Inventory History
3 month trend: +0.31%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDD86250.
관련 부품
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설명
유통업체에서 제공한 onsemi FDD86250에 대한 설명입니다.
Shielded Gate PowerTrench® MOSFET, N-Channel, 150 V, 51 A, 22 mΩ
Transistor, N-channel, shielded gate, PowerTrench MOSFET, 150V 51A, 22mOhm, 8A | ON Semiconductor FDD86250
Power Field-Effect Transistor, 8A I(D), 150V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N CH, 150V, 50A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0184ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:132W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +0.31%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance18.4 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.11 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation132 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max22 mΩ
Resistance45 MΩ
Rise Time3.7 ns
Schedule B8541290080
Threshold Voltage2.9 V
Turn-Off Delay Time20 ns
Turn-On Delay Time11.2 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm