MOSFET, DUAL, N, SMD, SUPERSOT-6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:3A; Current Id Max:3A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):70mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.