onsemi FDC6401N

Transistor MOSFET Array Dual N-CH 20V 3A 6-Pin TSOT-23 T/R - Tape and Reel
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기술 사양

Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight36 mg
Technical
Continuous Drain Current (ID)3 A
Current Rating3 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationDual
Fall Time1.6 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance324 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Operating Temperature-55 °C
Nominal Vgs900 mV
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation960 mW
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time7 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage900 mV
Turn-Off Delay Time13 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)20 V
Dimensions
Height1 mm
Length3 mm
Width1.7 mm

문서

onsemi FDC6401N에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

element14 APAC
Datasheet5 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet7 pages1 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Technical Drawing1 pages6 years ago
Fairchild Semiconductor
Technical Drawing1 pages15 years ago
Jameco
Datasheet6 pages16 years ago
iiiC
Datasheet5 pages0 years ago
TME
Datasheet0 pages0 years ago

재고 내역

3 month trend:
+58.31%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDC6401N.

관련 부품

설명

유통업체에서 제공한 onsemi FDC6401N에 대한 설명입니다.

Transistor MOSFET Array Dual N-CH 20V 3A 6-Pin TSOT-23 T/R - Tape and Reel
Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3.0A, 70mΩ
MOSFET, DUAL, N, SMD, SUPERSOT-6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:3A; Current Id Max:3A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):70mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

제조업체 별칭

onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

부품 번호 별칭

이 부품은 다음과 같은 대체 부품 번호로 알려져 있을 수 있습니다.

  • FDC6401N.

기술 사양

Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight36 mg
Technical
Continuous Drain Current (ID)3 A
Current Rating3 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationDual
Fall Time1.6 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance324 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Operating Temperature-55 °C
Nominal Vgs900 mV
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation960 mW
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time7 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage900 mV
Turn-Off Delay Time13 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)20 V
Dimensions
Height1 mm
Length3 mm
Width1.7 mm

문서

onsemi FDC6401N에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

element14 APAC
Datasheet5 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet7 pages1 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Technical Drawing1 pages6 years ago
Fairchild Semiconductor
Technical Drawing1 pages15 years ago
Jameco
Datasheet6 pages16 years ago
iiiC
Datasheet5 pages0 years ago
TME
Datasheet0 pages0 years ago

규정 준수

환경 분류
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
규정 준수 정책
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 pages12 years ago
Rohs Statement1 pages10 years ago