onsemi FDC6333C
Production
기술 사양
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight36 mg
Technical
Continuous Drain Current (ID)2.5 A
Current Rating2.5 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance95 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time13 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance282 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation960 mW
Rds On Max95 mΩ
Resistance95 MΩ
Rise Time13 ns
Schedule B8541210080
Threshold Voltage1.8 V
Turn-Off Delay Time11 ns
Turn-On Delay Time4.5 ns
Dimensions
Height1 mm
Length3 mm
Width1.7 mm
Inventory History
3 month trend: +18.81%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
문서
onsemi FDC6333C에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.
element14 APAC
onsemi
Fairchild Semiconductor
Jameco
iiiC
TME
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDC6333C.
관련 부품
onsemiFDC6561AN
FDC6561AN ON Semiconductor Transistor MOSFET N-CH30V 2.5A 6-Pin TSOT-23 T/R, RoHS
InfineonIRLMS1503TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.1Ohm;ID 3.2A;Micro6 (SOT-23);PD 1.7W;-55de
onsemiFDC6506P
Dual P-Channel PowerTrench® MOSFET, Logic Level, -30V, -1.8A, 170mΩ
설명
유통업체에서 제공한 onsemi FDC6333C에 대한 설명입니다.
Transistor MOSFET N/P-Channel 30 Volt 2.5A/2A 6-Pin SuperSOT
ON SEMICONDUCTOR - FDC6333C - Dual MOSFET, N and P Channel, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V
Dual N / P-Channel 30 V 95 mOhm PowerTrench Mosfet - SSOT-6
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, NP CH, 30V, 2.5/2A, SSOT6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +18.81%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
기술 사양
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight36 mg
Technical
Continuous Drain Current (ID)2.5 A
Current Rating2.5 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance95 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time13 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance282 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation960 mW
Rds On Max95 mΩ
Resistance95 MΩ
Rise Time13 ns
Schedule B8541210080
Threshold Voltage1.8 V
Turn-Off Delay Time11 ns
Turn-On Delay Time4.5 ns
Dimensions
Height1 mm
Length3 mm
Width1.7 mm
문서
onsemi FDC6333C에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.
element14 APAC
onsemi
Fairchild Semiconductor
Jameco
iiiC
TME