Texas Instruments CSD13202Q2
Production
가격 및 재고
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 595-CSD13202Q2 | 4,294 | 1 | Tape & Reel | 1d | ||||||||
| CSD13202Q2 | 2,908,318 | 1 | Cut Tape | 14h | ||||||||
| 296-38911-1-ND | 10,474 | 1 | Cut Tape | 1d | ||||||||
| CSD13202Q2 | 2,718 | 1 | Cut Tape | 1d | ||||||||
| CSD13202Q2 | 14,244 | 3d |
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins6
Technical
Continuous Drain Current (ID)14.4 A
Drain to Source Breakdown Voltage12 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)12 V
Element ConfigurationSingle
Fall Time13.6 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance997 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.7 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.7 W
Rds On Max9.3 mΩ
Rise Time28 ns
Schedule B8541290080
Threshold Voltage800 mV
Turn-Off Delay Time11 ns
Turn-On Delay Time4.5 ns
Dimensions
Height800 µm
Length2 mm
Thickness750 µm
Width2 mm
Inventory History
3 month trend: +41.39%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Lifecycle StatusProduction (Last Updated: 17 hours ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 17 hours ago)
Engineering Resources
View Evaluation kits and Reference designs for Texas Instruments CSD13202Q2.
관련 부품
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SiA406DJ Series N-Channel 12 V 0.0198 Ohm Power Mosfet -PowerPAK SC-70-6L-Single
Vishay SIB488DK-T1-GE3
SiB488DK Series N-Channel 12 V 20 mOhm 13 W Power Mosfet -PowerPAK SC-75-6L
설명
유통업체에서 제공한 Texas Instruments CSD13202Q2에 대한 설명입니다.
12-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 9.3 mOhm 6-WSON -55 to 150
Trans MOSFET N-CH 12V 22A 6-Pin WSON EP T/R
MOSFET, N-CH, 12V, 22A, WSON-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 12V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 2.7W; Transistor Case Style: WSON; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Power Field-Effect Transistor, 14.4A I(D), 12V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH Power MOSFET 12V 9.3mohm
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- Texas Instruments Inc.
Inventory History
3 month trend: +41.39%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins6
Technical
Continuous Drain Current (ID)14.4 A
Drain to Source Breakdown Voltage12 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)12 V
Element ConfigurationSingle
Fall Time13.6 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance997 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.7 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.7 W
Rds On Max9.3 mΩ
Rise Time28 ns
Schedule B8541290080
Threshold Voltage800 mV
Turn-Off Delay Time11 ns
Turn-On Delay Time4.5 ns
Dimensions
Height800 µm
Length2 mm
Thickness750 µm
Width2 mm