1.5-18 GHZ SURFACE MOUNT PSEUDOMORPHIC HEMT RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
RF Bipolar Transistor; Transistor Type:RF Bipolar; Package/Case:SOT-363; Power Dissipation, Pd:180mW; Output Third Order Intercept Point, IP3:21dB; DC Current Gain Min (hfe):10; Frequency Max:18GHz; Frequency Min:1.5GHz ;RoHS Compliant: Yes
TRANSISTOR, GAAS, HI-FREQ; Continuous Drain Current Id:40mA; Drain Source Voltage Vds:3V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:180mW; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SC-70; Current Id Max:40mA; Gain Bandwidth ft Min:1.5GHz; Gain Bandwidth ft Typ:12GHz; Package / Case:SOT-363; Power Dissipation Pd:180mW; Power Dissipation Pd:180mW; Pulse Current Idm:40mA; Termination Type:SMD; Voltage Vds Typ:3V; Voltage Vgs Max:3V