STMicroelectronics STGD5NB120SZT4

Trans IGBT Chip N-CH 1200V 10A 75000mW 3-Pin(2+Tab) DPAK T/R
NRND

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技術仕様

Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight3.949996 g
Technical
Collector Base Breakdown Voltage (VCES)1.2 kV
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current5 A
Current Rating5 A
Element ConfigurationSingle
Max Breakdown Voltage1.2 kV
Max Collector Current10 A
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Operating Temperature-55 °C
PackagingDigi-Reel®
Power Dissipation55 W
Rise Time170 ns
Schedule B8541290080
Turn-Off Delay Time12.1 µs
Turn-On Delay Time690 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm

ドキュメント

STMicroelectronics STGD5NB120SZT4のデータシートとメーカー資料をダウンロードする。

Components Direct
Datasheet15 pages18 years ago
Farnell
Datasheet15 pages18 years ago
element14 APAC
Datasheet9 pages18 years ago
Mouser
Datasheet13 pages19 years ago
Nu Horizons
Datasheet15 pages18 years ago

在庫履歴

3 month trend:
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Supply Chain

Lifecycle StatusNRND (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for STMicroelectronics STGD5NB120SZT4.

関連部品

説明

STMicroelectronics STGD5NB120SZT4の詳細は販売業者から提供されます。

Trans IGBT Chip N-CH 1200V 10A 75000mW 3-Pin(2+Tab) DPAK T/R
STGD5NB120SZ Series 1200 V 10 A Low Drop Internally Clamped IGBT - TO-252-3
IGBT, 1.3V, 10A, TO-252-3; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.2kV; Power Dissipation Pd: 75W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Transistor Type: IGBT

メーカーの別名

STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

部品番号の別名

こちらの部品は、以下の代替部品番号で知られている場合があります:

  • STGD5NB120SZT4.

技術仕様

Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight3.949996 g
Technical
Collector Base Breakdown Voltage (VCES)1.2 kV
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current5 A
Current Rating5 A
Element ConfigurationSingle
Max Breakdown Voltage1.2 kV
Max Collector Current10 A
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Operating Temperature-55 °C
PackagingDigi-Reel®
Power Dissipation55 W
Rise Time170 ns
Schedule B8541290080
Turn-Off Delay Time12.1 µs
Turn-On Delay Time690 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm

ドキュメント

STMicroelectronics STGD5NB120SZT4のデータシートとメーカー資料をダウンロードする。

Components Direct
Datasheet15 pages18 years ago
Farnell
Datasheet15 pages18 years ago
element14 APAC
Datasheet9 pages18 years ago
Mouser
Datasheet13 pages19 years ago
Nu Horizons
Datasheet15 pages18 years ago

コンプライアンス

環境分類
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant