Toshiba SSM3J332R,LF(T
技術仕様
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)6 A
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)12 V
Input Capacitance560 pF
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Rds On Max42 mΩ
Turn-Off Delay Time75 ns
Turn-On Delay Time15 ns
Inventory History
3 month trend: +24.27%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Toshiba SSM3J332R,LF(T.
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N-Channel Power MOSFET, Logic Level, 50V, 200mA, 3.5Ω
説明
Toshiba SSM3J332R,LF(Tの詳細は販売業者から提供されます。
Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F T/R
Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Small Signal Field-Effect Transistor
MOSFET, P-CH, 30V, 6A, SOT-23F; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
メーカーの別名
Toshibaは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Toshiba は以下の名前でも知られているかもしれません：
- TOSH
- TOS
- Toshiba Semiconductor and Storage
- TOSHIB
- SMK
- TOSHIBA CORP
- TOSHI
- TSENG
- TOSHIBA CORPORATION
- TSH
- Toshiba America Electronic Components
- MARKTECH OPTOELECTRONICS
- Toshiba Memory America Inc
- TOSHIBA ELECTRONICS
- Toshiba Electronic Devices and Storage Corporation
- Toshiba America
- TOSHIBA ELECTRONIC COMPONENTS
- Toshiba America Electronic Components Inc
- TOSHIBA-PB FREE
- TOSHIBA SEMI
- TOSHIBAPb
- Toshiba Semiconductor
- TOBHIBA
- TOSHIAB
- Toshiba Memory
Inventory History
3 month trend: +24.27%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
技術仕様
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)6 A
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)12 V
Input Capacitance560 pF
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Rds On Max42 mΩ
Turn-Off Delay Time75 ns
Turn-On Delay Time15 ns