Technical
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)80 V
Current Transfer Ratio100 %
Dark Current100 nA
Fall Time3 µs
Forward Current50 mA
Forward Voltage1.5 V
Isolation Voltage3750 Vrms
Max Collector Current50 mA
Max Input Current50 mA
Max Operating Temperature110 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Output TypePhototransistor
Power Dissipation170 mW
Reverse Breakdown Voltage6 V
Reverse Voltage (DC)6 V
Rise Time3 µs
Schedule B8541408000