価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SQ4850EY-T1_GE3CT-ND | 19,960 | 1 | Cut Tape | ||||||||
| Newark | SQ4850EY-T1_GE3 | 0 | 2500 | Tape & Reel | ||||||||
| Avnet | SQ4850EY-T1-GE3 | 0 | 2500 | 3d | ||||||||
| Farnell | SQ4850EY-T1_GE3 | 790 | 5 | Cut Tape | 21h | |||||||
| element14 APAC | SQ4850EY-T1_GE3 | 790 | 5 | Cut Tape | 11h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-08-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-12-18
LTD Date2024-06-17
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1.5W(Ta) 20V 2.5V@ 250¦ÌA 17nC@ 10 V 1N 60V 18m¦¸@ 10A,10V 9.2A 864pF@30V SOIC-8
説明
Vishay SQ4850EY-T1_GE3の詳細は販売業者から提供されます。
SQ4850EY-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 12 A, 60 V, 8-PIN SOIC
Trans MOSFET N-CH 60V 12A Automotive 8-Pin SOIC N T/R
SQ4850EY Series 30 V 12 A SMT Automotive N-Channel Mosfet - SOIC-8
Mosfet,n Channel,w Diode,60V,12A,so8; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; On Resistance Rds(On):0.017Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
メーカーの別名
Vishayは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Vishay は以下の名前でも知られているかもしれません：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技術仕様
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.25 nF
Max Operating Temperature175 °C
Max Power Dissipation6.8 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation6.8 W
Rds On Max22 mΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time23 ns
Turn-On Delay Time7 ns