Vishay IRFU430APBF

IRFU430A Series N-Channel 500 V 2 Ohm 110 W Power Mosfet - IPAK (TO-251)

MOSFET, POWER, N-CH, VDSS 500V, RDS(ON) 1.7 OHMS, ID 5A, I-PAK, PD 110W, VGS+/-30V,-55C

Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

110W(Tc) 30V 4.5V@ 250µA 24nC@ 10 V 1individualNChannel 500V 1.7Ω@ 3A,10V 5A 490pF@25V TO-251AA Through hole mounting 6.73mm*2.39mm*6.22mm

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:5A; On Resistance, Rds(on):1.7ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes

MOSFET, N, 500V, 5A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:5A; Junction to Case Thermal Resistance A:1.1°C/W; On State resistance @ Vgs = 10V:1.7kohm; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:20A; Termination Type:Through Hole; Turn Off Time:16ns; Turn On Time:27ns; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V