価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STU5N52K3 | 0 | 1 | 11h | ||||||||
| Microchip USA | STU5N52K3 | 1,081 | 3500 | Tray | 17h | |||||||
| Win Source | WS-STU5N52K3 | 20,000 | 13 | 2h | ||||||||
| Worldway Electronics | STU5N52K3 | 18,805 | 7 | Tube | 34m | |||||||
| GreenTree Electronics | STU5N52K3 | 1,100 | 2d |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-01-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-01-10
LTD Date2021-07-10
説明
STMicroelectronics STU5N52K3の詳細は販売業者から提供されます。
N-channel 525 V, 1.2 Ohm typ., 4.4 A SuperMESH3(TM) Power MOSFET in IPAK package
Mosfet Transistor, N Channel, 4.4 A, 525 V, 1.2 Ohm, 10 V, 3.75 V |Stmicroelectronics STU5N52K3
525 V, 4.4 A, 1.2 OHM, IPAK, N-CHANNEL SUPERMESH3 POWER MOSFET Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET, N CH, 525V, 4.4A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:525V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.4 A
Drain to Source Breakdown Voltage525 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)525 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance545 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage525 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max1.5 Ω
Rise Time11 ns
Turn-Off Delay Time29 ns
Turn-On Delay Time9 ns
Dimensions
Height6.9 mm
Length6.6 mm
Width2.4 mm