代替部品
Price @ 1000
$ 1.49
$ 1.456
$ 1.456
Stock
96,653
39,830
39,830
Authorized Distributors
6
4
4
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
TO-263-3
TO-263-3
Drain to Source Voltage (Vds)
500 V
500 V
500 V
Continuous Drain Current (ID)
8 A
8 A
8 A
Threshold Voltage
-
-
-
Rds On Max
850 mΩ
850 mΩ
850 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
30 V
Power Dissipation
-
-
-
Input Capacitance
1.1 nF
1.1 nF
1.1 nF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-01-05
Lifecycle StatusProduction (Last Updated: 9 months ago)
関連部品
STMicroelectronicsSTB10N65K3
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in D2PAK package
説明
Vishay IRF840LCSPBFの詳細は販売業者から提供されます。
MOSFET N-CH 500V 8A D2PAK
N-Ch MOSFET 500V 8A 30V 4V@250µA 39nC@10V 850mΩ@4.8A,10V 1.1nF@25V 3.1W(Ta)/125W(Tc) TO-263-3 SMD 10.67mm×9.65mm×4.83mm
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
NCHAN, SMD-220, 500V IRF840LCSPBF
メーカーの別名
Vishayは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Vishay は以下の名前でも知られているかもしれません：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技術仕様
Physical
Case/PackageTO-263-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)8 A
Current Rating8 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vds)500 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.1 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Rds On Max850 mΩ
Rise Time25 ns
Turn-Off Delay Time27 ns
Turn-On Delay Time12 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm