サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-12-14
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
関連部品
VishaySIHF6N40D-E3
MOSFET, N-CH, 400V, 6A, TO-220FP; Transistor Polarity:N Channel; Continuous Drai
VishaySIHP6N40D-E3
Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
説明
STMicroelectronics STP9NM40Nの詳細は販売業者から提供されます。
N-channel 400 V, 0.73 Ohm typ., 5.6 A MDmesh(TM) II Power MOSFET in a TO-220 package
Trans MOSFET N-CH 400V 5.6A 3-Pin TO-220 Tube
MOSFET N-CH 400V 5.6A TO220
Power Field-Effect Transistor, 5.6A I(D), 400V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.6 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance790 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time8.8 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance365 pF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max790 mΩ
Rise Time4.4 ns
Turn-Off Delay Time25 ns
Turn-On Delay Time7 ns