価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STF10NM50N | 0 | 5 | 4h | ||||||||
| Microchip USA | STF10NM50N | 364 | 600 | Tube | 5d | |||||||
| Component Stockers USA | STF10NM50N | 672 | >1wk | |||||||||
| Win Source | WS-STF10NM50N | 9,000 | 25 | 10h | ||||||||
| Worldway Electronics | STF10NM50N | 26,918 | 7 | Tube | 9h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
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説明
STMicroelectronics STF10NM50Nの詳細は販売業者から提供されます。
N-channel 500 V, 0.53 Ohm, 7 A TO-220FP MDmesh(TM) II Power MOSFET
Trans MOSFET N-CH 500V 7A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 7A I(D), 500V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 500V, 7.0A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2013)
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance630 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance450 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation25 W
Rds On Max630 mΩ
Resistance630 MΩ
Rise Time4.4 ns
Threshold Voltage3 V
Turn-Off Delay Time7.8 ns
Turn-On Delay Time7.8 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm