価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STH320N4F6-2 | 0 | 1K | 1d | ||||||||
| Mouser | 511-STH320N4F6-2 | 944 | 1 | Tape & Reel | ||||||||
| Win Source | WS-STH320N4F6-2 | 34,000 | 14 | 11h | ||||||||
| Worldway Electronics | STH320N4F6-2 | 18,521 | 7 | Tape & Reel | 10h | |||||||
| Esaler Electronic | STH320N4F6-2 | 1,000 | 4d |
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-02-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2019-10-05
LTD Date2020-04-05
関連部品
InfineonAUIRFS8408-7P
Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonAUIRFS8409
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
STMicroelectronicsSTH360N4F6-2
N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
STMicroelectronicsSTH400N4F6-2
STH400N4F6-2 N-channel MOSFET Transistor, 180 A, 40 V, 3-Pin H2PAK-2
STMicroelectronicsSTH410N4F7-2AG
Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package
説明
STMicroelectronics STH320N4F6-2の詳細は販売業者から提供されます。
Power Field-Effect Transistor, 200A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STH320N4F6-2 N-channel MOSFET Transistor, 200 A, 40 V, 3-Pin H2PAK
N-channel 40 V, 1.1 mOhm typ., 200 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
Trans MOSFET N-CH 40V 200A Automotive 3-Pin(2+Tab) H2PAK T/R
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)200 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.3 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time95 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.8 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation340 W
Rds On Max1.3 mΩ
Rise Time98 ns
Turn-Off Delay Time190 ns
Turn-On Delay Time28 ns
Dimensions
Height4.8 mm
Length15.8 mm
Width10.4 mm