関連部品
STMicroelectronicsSTGW40H65FB
IGBT 650V 80A 283W TO247 / IGBT Trench Field Stop 650 V 80 A 283 W Through Hole TO-247-3
onsemiFGA6540WDF
IGBT 650V 80A 238W TO-3PN / Trans IGBT Chip N-CH 650V 80A 238000mW 3-Pin(3+Tab) TO-3P Tube
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Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
説明
STMicroelectronics STGWT40H65FBの詳細は販売業者から提供されます。
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
STGWT40H65FB, IGBT Transistor, 80 A 650 V, 3-Pin TO-3P
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
283W 1.6V 650V 80A TO-3P 15.6mm*4.8mm*18.7mm
TO3P IGBT 40A @100C 600V TRENC
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.756003 g
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Max Collector Current80 A
Max Operating Temperature175 °C
Max Power Dissipation283 W
Min Operating Temperature-55 °C
Number of Elements1
Schedule B8541290080
Dimensions
Height20.1 mm
Length15.8 mm
Width5 mm