サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-01-14
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2018-06-22
LTD Date2018-12-22
関連部品
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N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in I2PAK package
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説明
STMicroelectronics STFI24N60M2の詳細は販売業者から提供されます。
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in I2PAKFP package
STFI24N60M2 N-channel MOSFET Transistor, 18 A, 650 V, 3-Pin I2PAKFP
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) I2PAKFP Tube
30W(Tc) 25V 4V@ 250¦ÌA 29nC@ 10 V 1individualNChannel 600V 190m¦¸@ 9A,10V 18A 1.06nF@100V TO-281 Through hole mounting 10.85mm(height)
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance168 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.06 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Operating Temperature-55 °C
Power Dissipation30 W
Rds On Max190 mΩ
Rise Time9 ns
Turn-Off Delay Time60 ns
Turn-On Delay Time14 ns
Dimensions
Height10.85 mm
Length10.4 mm
Width4.6 mm