STMicroelectronics STF10NM60ND

N-channel 600 V, 0.57 Ohm, 8 A, TO-220FP FDmesh(TM) II Power MOSFET
$ 1.141
Obsolete
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DistributorSKUMinPkg
DigiKey497-12246-ND3781Tube
AvnetSTF10NM60ND01K
4d
FarnellSTF10NM60ND05
4h
Mouser511-STF10NM60ND9461Tube
Win SourceWS-STF10NM60ND6030
5h

データシート & ドキュメント

STMicroelectronics STF10NM60NDのデータシートとメーカー資料をダウンロードする。

IHS

Datasheet12ページ2年前

Newark

STMicroelectronics

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代替部品

部品
代替部品
STMicroelectronicsSTF10NM60ND
STMicroelectronicsSTF10NM60N
Price @ 1000
$ 1.141
$ 1.47
Stock
135,847
1,434,182
Authorized Distributors
4
6
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
8 A
8 A
Threshold Voltage
4 V
3 V
Rds On Max
550 mΩ
550 mΩ
Gate to Source Voltage (Vgs)
25 V
25 V
Power Dissipation
25 W
25 W
Input Capacitance
540 pF
540 pF

サプライチェーン

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-02-11
Lifecycle StatusObsolete (Last Updated: 1 month ago)

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説明

STMicroelectronics STF10NM60NDの詳細は販売業者から提供されます。

N-channel 600 V, 0.57 Ohm, 8 A, TO-220FP FDmesh(TM) II Power MOSFET
STMicroelectronics
Trans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220FP Tube
Avnet
25W(Tc) 25V 4V@ 250¦ÌA 19nC@ 10 V 1N 600V 550m¦¸@ 4A,10V 8A 540pF@50V TO-220FP 16.4mm
UnikeyIC
Power Field-Effect Transistor, 8A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N CH, 600V, 8A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:25W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
element14 APAC

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element14 APAC
Farnell
Future Electronics
Lanka Micro

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