説明
STMicroelectronics STD7NM80-1の詳細は販売業者から提供されます。
N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in IPAK package
Transistor MOSFET N-CH 800V 6.5A 3-Pin (3+Tab) IPAK Tube
STD7NM80-1 N-channel MOSFET Transistor, 6.5 A, 800 V, 3-Pin TO-251
800 V, 0.95 OHM, 6.5 A N-CHANNEL IPAK MDMESH POWER MOSFET Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET, N CH, 800V, 6.5A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:90W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
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技術仕様
Physical
Case/PackageTO-251
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.05 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance620 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max1.05 Ω
Rise Time8 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time35 ns
Turn-On Delay Time20 ns
Dimensions
Height6.2 mm
Length6.6 mm
Width2.4 mm