サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-03-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-12-04
LTD Date2010-06-04
関連部品
Rochester ElectronicsIPS105N03LG
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Dr
説明
onsemi RFD16N05の詳細は販売業者から提供されます。
Trans MOSFET N-CH 50V 16A 3-Pin (3+Tab) TO-251 Rail
16A, 50V, 0.047 OHM, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:50V; Continuous Drain Current, Id:16A; On Resistance, Rds(on):0.047ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:50V; Current, Id Cont:16A; Resistance, Rds On:0.047ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:I-PAK; Termination Type:Through Hole; Operating Temperature Range:-55°C to +175°C; Alternate Case Style:TO-251; Current, Idm Pulse:20A; Lead Length:9.65mm; Lead Spacing:2.28mm; Power Dissipation:60W; Power, Pd:72W; SMD Marking:RFD16N05; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, t Off:16ns; Time, t On:30ns; Transistors, No. of:1; Voltage, Vds Max:50V
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-251
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)16 A
Current Rating16 A
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance47 mΩ
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance900 pF
Max Operating Temperature175 °C
Max Power Dissipation72 W
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation72 W
Rds On Max47 mΩ
Rise Time30 ns
Turn-Off Delay Time55 ns
Voltage Rating (DC)50 V