価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STB60N55F3 | 0 | 1 | 22h | ||||||||
| element14 APAC | STB60N55F3 | 0 | 1 | 11h | ||||||||
| Microchip USA | STB60N55F3 | 174 | 150 | 14h | ||||||||
| Win Source | WS-519620 | 10,200 | 14 | 23h | ||||||||
| Worldway Electronics | STB60N55F3 | 14,281 | 7 | Tape & Reel | 22h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-01-29
LTD Date2014-07-29
関連部品
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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;D2Pak;PD 180W;VGS +/-20V
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Power MOSFET, N Channel, 55 V, 40 A, 0.005 ohm, TO-263 (D2PAK), Surface Mount
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説明
STMicroelectronics STB60N55F3の詳細は販売業者から提供されます。
N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in D2PAK package
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 80A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:80A; Resistance, Rds On:0.0085ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination ;RoHS Compliant: Yes
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8.5 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time11.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.2 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation110 W
Rds On Max8.5 mΩ
Resistance8.5 MΩ
Rise Time50 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time35 ns
Turn-On Delay Time20 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm