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STMicroelectronicsSTB13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in D2PAK package
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説明
STMicroelectronics STB12NM60Nの詳細は販売業者から提供されます。
Trans MOSFET N-CH 600V 10A 3-Pin (2+Tab) D2PAK T/R
Power MOSFET Transistors N Ch 30V 0.005 Ohm 80A Pwr MOSFET
MOSFET N-CH 600V 10A D2PAK
Power Field-Effect Transistor, 10A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance410 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance960 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation90 W
Rds On Max410 mΩ
Rise Time9 ns
Turn-Off Delay Time60 ns
Turn-On Delay Time15 ns