価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | STB15N65M5 | 2 | 1 | |||||||||
| RS (Formerly Allied Electronics) | STB15N65M5 | 0 | 50 | Bulk | 21h | |||||||
| Microchip USA | STB15N65M5 | 1,584 | 3K | Tray | 21h | |||||||
| Win Source | WS-STB15N65M5 | 38,000 | 90 | 6h | ||||||||
| Worldway Electronics | STB15N65M5 | 11,777 | 7 | Tape & Reel | 4h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-03-05
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2021-01-10
LTD Date2021-07-10
関連部品
STMicroelectronicsSTB18N60M2
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in D2PAK package
STMicroelectronicsSTB16N65M5
N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in D2PAK package
STMicroelectronicsSTB12NM50ND
N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
説明
STMicroelectronics STB15N65M5の詳細は販売業者から提供されます。
N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in D2PAK package
STB15N65M5 N-CHANNEL MOSFET TRANSISTOR, 11 A, 710 V, 3-PIN D2PAK
Trans MOSFET N-CH 650V 11A 3-Pin(2+Tab) D2PAK T/R
Single N-Channel 650 V 0.34 Ohm 22 nC 85 W Silicon SMT Mosfet - TO-263-3
Excellent switching performance | MOSFET N-CH 650V 11A D2PAK
Power Field-Effect Transistor, 11A I(D), 650V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance340 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance810 pF
Max Operating Temperature150 °C
Max Power Dissipation85 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation85 W
Rds On Max340 mΩ
Resistance340 MΩ
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time30 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm