関連部品
STMicroelectronicsPD55008TR-E
Single N-Channel 40 V 52.8 W Silicon Surface Mount Mosfet - POWERSO-10RF
説明
STMicroelectronics PD55008S-Eの詳細は販売業者から提供されます。
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
STMicroelectronics SCT
Trans RF MOSFET N-CH 40V 4A 3-Pin PowerSO-10RF (Straight lead) Tube
8W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage40 V
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Frequency500 MHz
Gain15 dB
Gate to Source Voltage (Vgs)20 V
Max Frequency1 GHz
Max Operating Temperature165 °C
Max Output Power8 W
Max Power Dissipation52.8 W
Min Breakdown Voltage40 V
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage12.5 V
Output Power8 W
Power Dissipation52.8 W
Power Gain17 dB
Test Current150 mA
Test Voltage12.5 V
Voltage Rating40 V
Voltage Rating (DC)40 V