サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2009-11-02
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
関連部品
Diodes Inc.BC848B-7-F
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
説明
STMicroelectronics 3STR1630の詳細は販売業者から提供されます。
Trans GP BJT NPN 30V 6A 500mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Low voltage high performance NPN power transistor
6000 mA 30 V NPN Si SMALL SIGNAL TRANSISTOR
メーカーの別名
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)30 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min170
Max Breakdown Voltage30 V
Max Collector Current6 A
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingDigi-Reel®
PolarityNPN
Power Dissipation500 mW
Schedule B8541210080
Transition Frequency100 MHz
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant