サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1996-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-09-14
LTD Date2012-03-14
説明
onsemi TN6729Aの詳細は販売業者から提供されます。
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 50 @ 250mA 1V 1A 1W 80V
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AE
Trans GP BJT PNP 80V 1A 3-Pin TO-226 Bulk
PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-226-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight250 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating-1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min20
Max Collector Current1 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation1 W
Voltage Rating (DC)-80 V
Dimensions
Height7.87 mm