サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2000-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-09-14
LTD Date2012-03-14
説明
onsemi MPSW3725の詳細は販売業者から提供されます。
Bulk Through Hole NPN Bipolar (BJT) Transistor 60 @ 100mA 1V 1.2A 1W 250MHz
Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-226
Trans GP BJT NPN 40V 1.2A 3-Pin TO-226 Bulk
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-226
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight250 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage950 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating1.2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min25
Max Collector Current1.2 A
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1 W
Transition Frequency250 MHz
Voltage Rating (DC)40 V