サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-06-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-09-23
LTD Date2011-03-23
関連部品
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Power MOSFET, Enhancement Mode, P Channel, 60 V, 1.7 A, 0.39 ohm, SOT-223, Surface Mount
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InfineonBSP295H6327XTSA1
Power MOSFET, N Channel, 60 V, 1.8 A, 300 Milliohms, SOT-223, 4 Pins, Surface Mount
説明
onsemi SFM9014TFの詳細は販売業者から提供されます。
Trans MOSFET P-CH 60V 1.8A 4-Pin (3+Tab) SOT-223 T/R
P-Channel 60V 1.8A (Ta) 2.8W (Ta) Surface Mount SOT-223-4
Tape & Reel (TR) Surface Mount P-Channel MOSFET (Metal Oxide) Mosfet Transistor 1.8A Ta 2.8W Ta 60V -55C~150C TJ
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)1.8 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance500 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation2.8 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation2.8 W
Rds On Max500 mΩ
Rise Time19 ns
Turn-Off Delay Time21 ns