サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-05-14
Lifecycle StatusProduction (Last Updated: 2 months ago)
LTB Date2011-03-02
LTD Date2011-09-02
関連部品
Rochester ElectronicsIPS105N03LG
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Dr
説明
onsemi FDU2572の詳細は販売業者から提供されます。
TO-251, SINGLE, N-CH, 150V, 56MOHM ULTRAFET TRENCH MOSFET
MOSFET N-CH 150V 4A/29A IPAK
Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN
MOSFETs 150V, 29a, 0.056 Ohm
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-251
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4 A
Current Rating29 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance54 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.77 nF
Max Operating Temperature175 °C
Max Power Dissipation135 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation135 W
Rds On Max54 mΩ
Rise Time14 ns
Turn-Off Delay Time31 ns
Voltage Rating (DC)150 V