価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | NVMFS5C404NT1G | 55,500 | 1500 | 2d | ||||||||
| Newark | NVMFS5C404NT1G | 9,079 | 1 | Cut Tape | ||||||||
| Verical | NVMFS5C404NT1G | 21,000 | 92 | |||||||||
| Rochester Electronics | NVMFS5C404NT1G | 34,500 | 23h | |||||||||
| DigiKey | NVMFS5C404NT1GOSCT-ND | 745 | 1 | Cut Tape |
CADモデル
製造元 onsemi NVMFS5C404NT1G のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
| ソース | eCAD | mCAD | ファイル |
|---|---|---|---|
 EE Concierge | シンボルフットプリント | ||
 SnapEDA | フットプリント | ダウンロード |
CADモデルをダウンロードする際に、パートナーサイトが新しいタブで開きます。
OctopartからCADモデルをダウンロードすることにより、お客様は弊社の利用規約とプライバシーポリシーに同意したものとみなされます。
代替部品
Price @ 1000
$ 3.78
$ 3.38
$ 3.38
Stock
597,905
1,117,433
1,117,433
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DFN
DFN
DFN
Drain to Source Voltage (Vdss)
40 V
40 V
40 V
Continuous Drain Current (ID)
378 A
352 A
352 A
Threshold Voltage
4 V
-
-
Rds On Max
700 µΩ
750 µΩ
750 µΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
3.9 W
3.9 W
3.9 W
Input Capacitance
8.4 nF
12.168 nF
12.168 nF
サプライチェーン
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-03-05
Lifecycle StatusNRND (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 5 years ago)
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説明
onsemi NVMFS5C404NT1Gの詳細は販売業者から提供されます。
ON SEMICONDUCTOR - NVMFS5C404NT1G - MOSFET Transistor, N Channel, 378 A, 40 V, 570 µohm, 10 V, 4 V
Single N-Channel 40 V 0.7 mOhm 128 nC 200 W Silicon Mosfet - DFN-5
Single N-Channel Power MOSFET 40V, 378A, 0.7mΩ Power MOSFET 40V, 378A, 0.7 mOhm, Single N-Channel, SO8-FL. 1500 / Tape & Reel
Trans MOSFET N-CH 40V 53A Automotive 5-Pin SO-FL EP T/R
MOSFET N-CH 40V 49A 5DFN / N-Channel 40 V 378A (Tc) 3.9W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
T6-40V N 0.7 Mohms Sl Rohs Compliant: Yes |Onsemi NVMFS5C404NT1G
Power Field-Effect Transistor, 378A I(D), 40V, 0.0007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
3.9W(Ta),200W(Tc) 20V 4V@ 250¦ÌA 128nC@ 10 V 1N 40V 700¦Ì¦¸@ 50A,10V 378A 8.4nF@25V SO 4.9mm*5.9mm*1.05mm
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins5
Number of Terminals5
Technical
Continuous Drain Current (ID)378 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance700 µΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time109 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.4 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.9 W
Rds On Max700 µΩ
Rise Time113 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time77 ns
Turn-On Delay Time16 ns
Dimensions
Height1.15 mm
Length5.1 mm
Width6.1 mm