MOSFET, P, SMD, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-2.7V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:-5.9A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-2.7V; Voltage Vgs Rds on Measurement:-10V
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.