onsemi NDT3055L

N-Channel Logic Level Enahncement Mode Field Effect Transistor 60V, 4A, 100mΩ

MOSFET, N CHANNEL, 60V, 4A, SOT-223; TRA; Transistor Polarity:N Channel; Continuous Drain Current Id:4A;

Power MOSFET, N Channel, 60 V, 4 A, 0.1 ohm, SOT-223, Surface Mount

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 4 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 120 / Gate-Source Voltage V = 20 / Fall Time ns = 20 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 50 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.1

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.