onsemi NDT3055の詳細は販売業者から提供されます。
N-Channel Enhancement Mode Field Effect Transistor 60V, 4A, 100mΩ
Power MOSFET, N Channel, 60 V, 4 A, 0.1 ohm, SOT-223, Surface Mount
Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R
Avnet Japan
60V N-Fet 100 Mo Sot223 Rohs Compliant: Yes
60V 4A 3W 100mΩ@4A,10V N Channel SOT-223-4 MOSFETs ROHS
Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NDT3055,004, PLASTIC MOLDED, S OT-223 PKG, SMD (47)<AZ
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.