価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NDS8858H | 9,841 | 446 | |||||||||
| Rochester Electronics | NDS8858H | 11,833 | 20h | |||||||||
| Win Source | WS-NDS8858H | 442 | 125 | 21h | ||||||||
| ICPartonline | NDS8858H | 34,870 | 2d | |||||||||
| Worldway Electronics | NDS8858H | 29,595 | 7 | Tape & Reel | 20h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13
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説明
onsemi NDS8858Hの詳細は販売業者から提供されます。
Trans MOSFET N/P-CH 30V 6.3A/4.8A 8-Pin SOIC N T/R
Tape & Reel (TR) Surface Mount N and P-Channel 2 Mosfet Array 6.3A 4.8A 4.8A 1W 19ns
Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Mounting Type:Surface Mount ;RoHS Compliant: Yes
These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)6.3 A
Current Rating4.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance720 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max35 mΩ
Rise Time20 ns
Turn-Off Delay Time40 ns