サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2017-03-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
説明
onsemi NDS8936の詳細は販売業者から提供されます。
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Dual Mosfet Array 30nC @ 10V 5.3A 900mW 10ns
2W 20V 2.8V@ 250¦ÌA 30nC@ 10V 2N 30V 35m¦¸@ 5.3A,10V 5.3A 720pF@15V SOIC-8 4.9mm*3.9mm*1.75mm
Trans MOSFET N-CH 30V 5.3A 8-Pin SOIC T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.3A; On Resistance, Rds(on):0.035ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)5.3 A
Current Rating5.3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance720 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.6 V
Number of Elements2
PackagingCut Tape
Power Dissipation2 W
Rds On Max35 mΩ
Resistance35 mΩ
Rise Time13 ns
Turn-Off Delay Time29 ns
Voltage Rating (DC)30 V
Dimensions
Row Spacing6.3 mm
Width4.05 mm