onsemi MUN5311DW1T1G

Dual Bias Resistor BJT NPN/PNP Transistor 50 Volt 100mA 6-Pin SOT-363

Bipolar Transistors (BJT); MUN5311DW1T1G; ON SEMICONDUCTOR; NPN, PNP; 6; 50 V; 100 mA

Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm

R1=10 KILO OHM, R2=10 KILO OHM COMPLEMENTARY BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

MUN5311DW1T1G NPN+PNP DIGI TRANSISTOR,100MA 50V 10 KOHM, RATIO OF 1,6-PIN SC-88

Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R

Complementary Bipolar Digital Transistor (BRT)

Brt Transistor, 50V, 10K/10Kohm, Sc88, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi MUN5311DW1T1G.

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.