onsemi MUN5214T1G

50 V, 100 mA, NPN Bipolar Digital Transistor (BRT), R1 = 10 kΩ, R2 = 47 kΩ

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

MUN Series 50 V 100 mA 10 kOhm NPN Silicon Bias Resistor Transistor - SOT-323

80@5mA,10V 1 NPN - Pre Biased 202mW 100mA 50V 500nA SC-70-3 Digital Transistors ROHS

NPN Bipolar Digital Transistor (BRT)

Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R

BRT TRANSISTOR, AEC-Q101, 50V, 10K/47K; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SC-70; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.