onsemi MUN5212DW1T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

Dual NPN Bipolar Digital Transistor (BRT)

Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R

MUN5212DW1 Series 1.9 V SMT NPN-Pre-Biased Digital Transistor - SOT-363

2 NPN pre-biased (Dual) 256mW 100mA 50V SOT-363 Digital Transistors ROHS

Brt Transistor, 50Vdc, 22K/22K, Sot-363; Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi MUN5212DW1T1G.

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.