onsemi MUN2213T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 47kO

NPN Bipolar Digital Transistor (BRT)

MUN Series 50 V 100 mA 47 kOhm NPN Silicon Bias Resistor Transistor - SC-59

MUN2213T1G NPN DIGITAL TRANSISTOR, 100 MA 50 V 47 KOHMS, RATIO OF 1, 3-PIN SC-59

Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R

Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN

TRANS, 50V, 47/47KOHM, SC-59-3; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 47kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SC-59; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.