onsemi MMUN2233LT1G

Bipolar Transistors (BJT); MMUN2233LT1G; ON SEMICONDUCTOR; NPN; 50 V; 100 mA; 3

MMUN Series 50 V 100 mA 4.7 kOhm NPN Silicon Bias Resistor Transistor - SOT-23

NPN SILICON BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236

MMUN2233LT1G NPN DIGITAL TRANSISTOR,100MA 50V 4.7 KOHM, RATIO OF 0.1,3-PIN SOT-23

80@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS

NPN Bipolar Digital Transistor (BRT)

Pre Biased Triodes NPN Ic=100mA Vceo=50V hfe=80 P=400mW SOT23

TRANSISTOR, RF, NPN, 50V, SOT-23-3; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm;

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.