CADモデル
製造元 onsemi MMUN2213LT1 のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
| ソース | eCAD | mCAD | ファイル |
|---|---|---|---|
 Ultra Librarian | シンボルフットプリント | ダウンロード |
CADモデルをダウンロードする際に、パートナーサイトが新しいタブで開きます。
OctopartからCADモデルをダウンロードすることにより、お客様は弊社の利用規約とプライバシーポリシーに同意したものとみなされます。
代替部品
Price @ 1000
$ 0.033
$ 0.038
$ 0.038
Stock
511,963
5,336,225
5,336,225
Authorized Distributors
2
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23-3
SOT-23-3
SOT-23-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
-
250 mV
250 mV
hFE Min
80
80
80
Power Dissipation
200 mW
246 mW
246 mW
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-12-31
LTD Date2008-06-30
関連部品
Diodes Inc.DDTC123JCA-7-F
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R / TRANS PREBIAS NPN 200MW SOT23-3
onsemiFJV3104RMTF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc.DDTC143ZCA-7-F
TRANS PREBIAS NPN 200MW SOT23-3 / Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R
onsemiFJV3103RMTF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
onsemiMMUN2211LT1
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
説明
onsemi MMUN2213LT1の詳細は販売業者から提供されます。
Bipolar (BJT) Single Transistor, NPN, 50 V, 100 mA, 400 mW, SOT-23, Surface Mount
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Cut Tape (CT) Surface Mount Single 3 Pre-Biased Bipolar Transistor (BJT) 100mA 246mW 50V 150C
Trans Digital BJT NPN 50V 100mA 400mW 3-Pin SOT-23 T/R
TRANSISTOR, DIGITAL SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: -; Power Dissipation Pd: 400mW; DC Collector Current: 100mA; DC Current Gain hFE: 80hFE; Transistor Case S
Small Signal Pre-Biased Transistor; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:50V; Continuous Collector Current Max.:100mA; Base Input Resistor, R1:47000ohm; Base-Emitter Resistor, R2:47000ohm RoHS Compliant: No
TRANSISTOR, DIGITAL SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:400mW; DC Collector Current:100mA; DC Current Gain hFE:80; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:5mA; Hfe Min:80; No. of Transistors:1; Package / Case:SOT-23; Pin Configuration:1; Power Dissipation Ptot Max:200mW; Resistance R1:47kohm; Resistance R2:47kohm; SMD Marking:A8C; Termination Type:SMD; Transistor Type:Bias Resistor (BRT); Voltage Vcbo:50V
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min80
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation200 mW
Voltage Rating (DC)50 V