onsemi ISL9N303AS3
$ 2.351
Obsolete
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-06-05
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2009-12-11
LTD Date2010-06-11
関連部品
InfineonIPI100N04S4H2AKSA1
MOSFET N-CH 40V 100A TO262-3 N-Channel 40 V 100A (Tc) 115W (Tc) Through Hole PG-TO262-3
InfineonIPI80N06S3-07
MOSFET N-CH 55V 80A TO262-3 N-Channel 55 V 80A (Tc) 135W (Tc) Through Hole PG-TO262-3
InfineonIPI110N20N3GAKSA1
MOSFET N-CH 200V 88A TO262-3 N-Channel 200 V 88A (Tc) 300W (Tc) Through Hole PG-TO262-3
説明
onsemi ISL9N303AS3の詳細は販売業者から提供されます。
Discrete Commercial N-Channel PowerTrench MOSFET, 30V, 75A, 0.0032 Ohms @ VGS = 10V, TO-262/I2PAK Package
TO-262AA, SINGLE, 30V, 0.0032OHM N-CH LL ULTRAFET TRENCH MOS
Trans MOSFET N-CH 30V 75A 3-Pin(3+Tab) I2PAK Tube
MOSFETs 30V, 75a, 0.0032 Ohm N-Channel
Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262AA, 3 PIN
215W(Tc) 3V@ 250µA 172nC@ 10V 1individualNChannel 30V 3.2mΩ@ 75A,10V 7pF@15V I2PAK，TO-262 Through hole mounting
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7 nF
Max Operating Temperature175 °C
Max Power Dissipation215 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation215 W
Rds On Max3.2 mΩ
Rise Time69 ns
Turn-Off Delay Time51 ns
Voltage Rating (DC)30 V