価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Microchip USA | HUF76445S3S | 395 | 300 | Tube | 11h | |||||||
| Win Source | WS-149058 | 86 | 40 | 19h | ||||||||
| Worldway Electronics | HUF76445S3S | 21,079 | 7 | Tube | 18h | |||||||
| Anlinkda | HUF76445S3S | 23,239 | 2h | |||||||||
| Klychip | HUF76445S3S | 連絡先 | 1 | >1wk |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-03-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
関連部品
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60V, N-Ch, 6.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
STMicroelectronicsSTB130N6F7
N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
説明
onsemi HUF76445S3Sの詳細は販売業者から提供されます。
60V, 75A, 0.0075 ohm, NCH LOGIC LEVEL ULTRAFET POWER MOSFET
PWR MOS ULTRAFET 60V/75A/0.0085OHMS N-CH LL TO-263AB
Power Field-Effect Transistor, 75A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):0.0065ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263 ;RoHS Compliant: Yes
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time135 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance4.965 nF
Max Operating Temperature175 °C
Max Power Dissipation310 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation310 W
Rds On Max6.5 mΩ
Rise Time126 ns
Turn-Off Delay Time62 ns
Voltage Rating (DC)60 V