サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-07-13
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
関連部品
onsemiSSU1N50BTU
Transistor,mosfet,n-Channel,500V V(Br)Dss,1.3A I(D),to-251Aa Rohs Compliant: Yes |Onsemi SSU1N50BTU
説明
onsemi FQU2N90TUの詳細は販売業者から提供されます。
Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) IPAK Rail
MOSFET N-CH 900V 1.7A IPAK
Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Field Effect Tube (MOSFET)
MOSFETs 900V N-Channel QFET
2.5W(Ta)£¬50W(Tc) 5V@ 250¦ÌA 15nC@ 10V 1individualNChannel 900V 7.2¦¸@ 850mA,10V 500pF@25V IPAK Through hole mounting
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.7 A
Current Rating1.7 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance7.2 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance500 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max7.2 Ω
Rise Time35 ns
Turn-Off Delay Time20 ns
Voltage Rating (DC)900 V