onsemi FQU2N60TU
$ 0.79
Obsolete
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
関連部品
onsemiFQU2N60CTU
Transistor: N-MOSFET; unipolar; 600V; 1.9A; 4.7ohm; 2.5W; -55+150 deg.C; THT; IPAK
STMicroelectronicsSTD3NK50Z-1
STMICROELECTRONICS STD3NK50Z-1 MOSFET Transistor, N Channel, 1.15 A, 500 V, 2.8 ohm, 10 V, 3.75 V
説明
onsemi FQU2N60TUの詳細は販売業者から提供されます。
Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET N-CH 600V 2A IPAK
MOSFETs 600V N-Channel QFET
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance4.7 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max4.7 Ω
Rise Time25 ns
Turn-Off Delay Time20 ns
Voltage Rating (DC)600 V