サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-06-18
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2009-12-04
LTD Date2010-06-04
説明
onsemi FQPF9N50CTの詳細は販売業者から提供されます。
N-Channel QFET® MOSFET 500V, 9A, 800mΩ
44W(Tc) 4V@ 250¦ÌA 35nC@ 10V 1N 500V 800m¦¸@ 4.5A,10V 1.03pF@25V TO-220F
Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)9 A
Current Rating9 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.03 nF
Max Operating Temperature150 °C
Max Power Dissipation44 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation44 W
Rds On Max800 mΩ
Rise Time65 ns
Turn-Off Delay Time93 ns
Voltage Rating (DC)500 V