サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-03-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-02-23
LTD Date2012-08-23
関連部品
説明
onsemi FDPF7N50の詳細は販売業者から提供されます。
N-Channel Power MOSFET, UniFETTM, Ultra FRFETTM, 500V, 5A, 1.5Ω, TO-220F
N-Channel UniFETTM MOSFET 500V, 7A, 900mΩ
Power Field-Effect Transistor, 7A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:7A; Resistance, Rds On:0.9ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:28A; No. of Pins:3; Power Dissipation:31.3W; Voltage, Vds Max:500V; Voltage, Vgs th Max:5V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance940 pF
Max Operating Temperature150 °C
Max Power Dissipation31.3 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation31.3 W
Rds On Max900 mΩ
Rise Time55 ns
Turn-Off Delay Time25 ns
Turn-On Delay Time6 ns