代替部品
Price @ 1000
$ 1.06
$ 0.913
Stock
338,113
191,219
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
800 V
800 V
Continuous Drain Current (ID)
5.5 A
2.8 A
Threshold Voltage
5 V
-
Rds On Max
2.5 Ω
2.6 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
51 W
47 W
Input Capacitance
1.31 nF
1.25 nF
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-06-18
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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説明
onsemi FQPF6N80Cの詳細は販売業者から提供されます。
Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220F
N-Channel 800 V 2.5 Ohm Flange Mount Mosfet - TO-220F
800V 5.5A 2.5´Î@10V2.75A 51W 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.3A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.95ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)5.5 A
Current Rating5.5 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time44 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.31 nF
Max Operating Temperature150 °C
Max Power Dissipation51 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation51 W
Rds On Max2.5 Ω
Resistance2.5 Ω
Rise Time65 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time47 ns
Turn-On Delay Time26 ns
Voltage Rating (DC)800 V
Dimensions
Height9.19 mm
Length10.16 mm
Width4.7 mm
コンプライアンス
環境分類
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
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